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| MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING Unit:millimeters FEATURES * High output power P1dB=38dBm(TYP.) * High power gain GLP=11dB(TYP.) * High power added efficiency add=45%(TYP.) @f=2.3GHz,P1dB=20dBm @f=2.3GHz,Pin=20dBm 2 1 @f=2.3GHz 2 0.60.2 o2.2 3 APPLICATION For UHF Band power amplifiers 5.0 QUALITY GRADE * GG RECOMMENDED BIAS CONDITIONS * VDS=10V * ID=1.3A * Rg=100 * Refer to Bias Procedure 9.00.2 14.0 1 GATE 2 SOURCE 3 DRAIN GF-7 ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGSO VGDO ID IGR IGF PT Tch Tstg *1:TC=25C Parameter Gate to source voltage Gate to drain voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings -15 -15 5.0 15 31.5 27.3 175 -65 to +175 *1 Unit V V A mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol IDSS VGs(off) gm P1dB GLP add Rth(ch-c) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power Linear power gain *2 Power added efficiency at P1dB Thermal resistance *1 VDS=3V,VGS=0V VDS=3V,ID=10mA VDS=3V,ID=1.3A VDS=10V,ID=1.3A,f=2.3GHz Vf method Test conditions Min - -2 - 37 10 - - Limits Typ - - 1.5 38 11 45 - Max 5 -5 - - - - 5.5 Unit A V S dBm dB % C/W *1:Channel to case *2:Pin=22dBm Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET TYPICAL CHARACTERISTICS ID vs. VGS 6 VDS=3V Ta=25C 6 VGS=-0.5V/Step Ta=25C VGS=0V 4 4 ID vs. VDS 2 2 0 -3 -2 -1 0 0 0 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE VGS(V) DRAIN TO SOURCE VOLTAGE VDS(V) PO & add vs. Pin (f=2.3GHz) 40 VDS=10V ID=1.3A GP=11 10 9 dB 13 12 11 PO 10 39 GLP,P1dB, ID and add vs. VDS (f=2.3GHz) ID=1.3A GLP P1dB 30 37 50 40 30 20 10 0 35 40 20 6 8 10 add 20 add 0 20 30 INPUT POWER Pin(dBm) VDS(V) Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET S11 ,S22 vs. f. +j50 +j25 +j100 S21 ,S12 vs. f. +90 3.0GHz +j10 3.0GHz 3.0GHz S22 25 50 100 250 +j250 S21 3.0GHz 0 180 5 4 3 2 0.5GHz 1 0 S12 0 0.5GHz I S21 I S11 -j10 -j250 0.1 -j25 -j50 -j100 Ta=25C VDS=10V ID=1.3A 0.2 -90 S PARAMETERS (Ta=25C,VDS=10V,ID=1.3A) Freq. (GHz) 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 Magn. 0.968 0.966 0.966 0.965 0.964 0.963 0.961 0.960 0.959 0.959 0.959 0.958 0.958 0.957 0.958 0.958 0.957 0.956 0.954 0.954 0.953 0.953 0.953 0.948 0.956 0.944 S11 Angle(deg.) -155.5 -159.7 -163.4 -166.8 -168.4 -171.3 -173.8 -175.4 -176.8 -178.7 -179.7 178.4 177.2 176.0 174.7 174.3 173.3 172.3 171.2 169.9 169.0 167.6 166.1 164.6 163.3 162.0 Magn. 3.763 3.340 2.768 2.460 2.219 2.021 1.831 1.613 1.591 1.500 1.425 1.359 1.301 1.255 1.201 1.040 0.993 0.977 0.949 0.921 0.909 0.901 0.876 0.873 0.843 0.832 S21 Angle(deg.) 97.8 93.6 90.8 87.5 87.1 84.1 82.2 80.2 78.0 75.7 73.7 71.6 69.9 67.7 66.2 65.3 63.3 61.7 59.1 57.0 55.4 54.3 52.2 49.9 48.4 45.5 Magn. 0.013 0.013 0.014 0.014 0.015 0.015 0.016 0.016 0.017 0.017 0.018 0.018 0.019 0.019 0.020 0.021 0.021 0.022 0.022 0.023 0.023 0.024 0.024 0.025 0.025 0.025 S12 Angle(deg.) 13.2 14.6 16.5 18.2 20.6 22.5 24.1 25.8 27.8 29.5 31.2 33.8 35.4 37.6 39.5 41.5 43.1 44.8 46.5 48.7 50.8 52.6 54.3 55.2 57.3 58.0 Magn. 0.823 0.823 0.822 0.822 0.820 0.819 0.818 0.814 0.804 0.807 0.805 0.801 0.795 0.789 0.785 0.784 0.783 0.783 0.782 0.780 0.779 0.778 0.778 0.776 0.775 0.773 S22 Angle(deg.) -177.6 -179.6 178.5 178.2 177.6 176.8 175.6 176.6 176.1 175.7 175.3 175.1 174.7 174.0 173.4 174.4 174.2 173.4 172.7 172.2 171.6 170.3 168.9 167.7 166.9 165.1 K 0.652 0.713 0.755 0.782 0.825 0.855 0.875 0.955 0.985 0.996 1.105 1.135 1.145 1.185 1.205 1.194 1.203 1.235 1.295 1.325 1.345 1.362 1.403 1.452 1.523 1.554 MSG/MAG (dB) 25.4 25.2 24.7 23.4 23.1 23.0 22.4 19.0 19.2 19.0 18.9 18.5 18.0 16.9 16.5 16.2 15.5 14.9 14.7 14.5 13.8 12.8 12.3 11.9 10.8 10.5 Nov. 97 |
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